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MEMS sensor generations represent the progress made in micro sensor technology and can be categorized as follows: ;1st Generation :MEMS sensor element mostly based on a silicon structure, sometimes combined with analog amplification on a micro chip..〔S.C.Terry,J.H.Jerman and J.B.Angell:A Gas Chromatographic Air Analyzer Fabricated on a Silicon Wafer,IEEE Trans.Electron Devices,ED-26,12(1979)1880-1886.〕 ;2nd Generation:MEMS sensor element combined with analog amplification and analog-to-digital converter on one micro chip. ;3rd Generation :Fusion of the sensor element with analog amplification, analog-to-digital converter and digital intelligence for linearization and temperature compensation on the same micro chip. ;4th Generation :Memory cells for calibration- and temperature compensation data are added to the elements of the 3rd MEMS sensor generation. ==References== 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「MEMS sensor generations」の詳細全文を読む スポンサード リンク
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